Vol. 11, issue 02-03, article # 38

Fattakhov Ya. V., Galyautdinov M. F., L'vova T. N., Khaibullin I. B. Dynamics of silicon melting on irradiation by incoherent high-power light pulses. // Atmospheric and oceanic optics. 1998. V. 11. No. 02-03. P. 231-235.    PDF
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Abstract:

For the first time the dynamics of anisotropic local melting of implanted silicon has been investigated for different regimes of light irradiation. The formation and growth of local melting zones (LMZs) on irradiation by light pulses have been recorded by a high-speed motion picture camera. For the first time the dependence of the number and size of the LMZs has been investigated in its dynamics. Additional data on the formation of defects in implanted semiconductors on irradiation by light pulses have been obtained.